Schottky Diode
Schematic figure of Schottky barrier lowering effect correlated with... | Download Scientific Diagram
Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs - ScienceDirect
Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact | ACS Applied Materials & Interfaces
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Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation - ScienceDirect
Schottky Barrier Lowering
Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors | Scientific Reports
Solved = Consider an Al - n - Si Schottky barrier at T = 300 | Chegg.com
A current-voltage model for double Schottky barrier devices
Schottky barrier lowering due to interface states in 2D heterophase devices - Nanoscale Advances (RSC Publishing) DOI:10.1039/D0NA00795A
Color online Energy diagram between metal-thin organic layer... | Download Scientific Diagram
Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors - Chee - 2019 - Advanced Materials - Wiley Online Library
a) Decrease of the Schottky barrier height in the interface between... | Download Scientific Diagram
Figure 1 from Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission | Semantic Scholar
Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes | SpringerLink
Schottky barrier - Wikipedia
Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes | SpringerLink
Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions | ACS Applied Materials & Interfaces
Professor Robert B. Laughlin, Department of Physics, Stanford University
nanoHUB.org - Resources: ECE 606 Lecture 26: Schottky Diode II: Watch Presentation
